1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com vn2106 features free from secondary breakdown low power drive requirement ease of paralleling low c iss and fast switching speeds high input impedance and high gain applications motor controls converters ampli?ers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ? ? ? ? ? ? ? ? ? ? ? general description the supertex vn2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ordering information device package option bv dss /bv dgs (v) r ds(on) (max) () to-92 vn2106 vn2106n3-g 60 4.0 absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55c to +150c soldering temperature* +300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6mm from case for 10 seconds. pin con?guration n-channel enhancement-mode vertical dmos fets ga te source drain -g indicates package is rohs compliant (green) product marking yy = year sealed ww = week sealed = green packaging s i v n 2 1 0 6 y y w w to-92 (n3) to-92 (n3) package may or may not include the following marks: si or
2 vn2106 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com electrical characteristics (t a = 25c unless otherwise speci?ed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 60 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.8 - 2.4 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - -3.8 -5.5 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage current - 0.1 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 1.0 a v gs = 0v, v ds = max rating - - 100 v ds = 0.8 max rating, v gs = 0v, t a = 125 o c i d(on) on-state drain current 0.6 - - a v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - 4.5 6.0 v gs = 5.0v, i d = 75ma - 3.0 4.0 v gs = 10v, i d = 500ma r ds(on) change in r ds(on) with temperature - 0.7 1.0 %/ o c v gs = 10v, i d = 500ma g fs forward transconductance 150 400 - mmho v ds = 25v, i d = 500ma c iss input capacitance - 35 50 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 13 25 c rss reverse transfer capacitance - 4.0 5.0 t d(on) turn-on delay time - 3.0 5.0 ns v dd = 25v, i d = 600ma, r gen = 25? t r rise time - 5.0 8.0 t d(off) turn-off delay time - 6.0 9.0 t f fall time - 5.0 8.0 v sd diode forward voltage drop - 1.2 1.8 v v gs = 0v, i sd = 600ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 600ma notes: all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) all a.c. parameters sample tested. 1. 2. switching waveforms and test circuit thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (a) to-92 300 1.0 1.0 125 170 300 1.0 notes: ? i d (continuous) is limited by max rated t j . 90% 10% 90% 90% 10% 10% puls e genera to r v dd r l outpu t d.u.t . t (on) t d(on) t (off ) t d(off) t f t r inpu t input output 10v v dd r gen 0v 0v
3 vn2106 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves output characteristics 2. 0 1. 6 1. 2 0. 8 0. 4 0 v ds (volts) v ds (volts) i d ) s e r e p m a ( i d ) s e r e p m a ( saturation characteristics maximum rated safe operating area 0.1 100 10 1 v ds (volts) i ) s e r e p m a ( d thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1.0 0.8 0.6 0.4 0.2 0 0.001 1 0 0.0 1 0.1 1.0 t p (seconds) tr ansconductance vs. drain current 0. 5 0. 4 0. 3 0. 2 0. 1 0 0 0 .4 0. 2 g s f ) s n e m e i s ( i d (amperes ) power dissipation vs. case temperature 0 1 50 10 0 50 2. 0 1. 0 0 12 5 75 25 t c (c ) p d ) s t t a w ( to-9 2 p d = 1w t a = 25 c to-9 2 t a = -55 c v ds = 25v 0 1 0 2 0 3 0 5 0 40 4v 3v 0 2 4 6 10 8 25c 125c v gs = 7v 9v 0.6 1 .0 0. 8 10v 8v 6v 5v 2. 0 1. 6 1. 2 0. 8 0. 4 0 4v 3v 7v 9v 10v 8v 6v 5v v gs = to-92 (dc) t a = 25c to-92 (pulsed) 10 1. 0 0. 1 0.01
4 vn2106 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristics q g (nanocoulombs) v s g ) s t l o v ( t j (c) v ) h t ( s g ) d e z i l a m r o n ( r ) n o ( s d ) d e z i l a m r o n ( v gs(th ) and r ds(on) variation with temperatur e on-resistance vs. drain curren t r ) n o ( s d ) s m h o ( v b s s d ) d e z i l a m r o n ( t j (c) transfer characteristic s v gs (volts ) i d ) s e r e p m a ( capacitance vs. drain-to-source voltage 50 ) s d a r a f o c i p ( c v ds (volts ) i d (amperes) bv ds s variation with te mperatur e 0 1 0 2 0 3 0 4 0 25 0 0 2 4 6 8 1 0 2. 0 1. 6 1. 2 0. 8 0. 4 0 -5 0 0 50 100 150 1. 1 1. 0 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 10 8 6 4 2 0 0 .2 0. 4 0.6 0.8 1.0 -5 0 0 50 10 0 1 50 30 pf v ds = 40 v v ds = 10 v v gs = 5v v gs = 10 v t a = - 5 5 c v ds = 25v 1 2 5 c 0 0 .5 1. 0 1.5 2.5 2.0 f = 1mhz c is s c o s s c rs s 0. 9 90 pf 2. 0 1. 6 1. 2 0. 8 0. 4 0 v gs(th ) @ 1m a 2 5 c 0 r ds(on) @ 10v, 0.5a
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. website: http//www .supertex.com . ?2008 all rights reserved. unauthorized use or reproduction is prohibited . 1235 bordeaux drive, sunnyvale, ca 9408 9 te l: 408-222-8888 www .supertex.com 5 vn2106 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp-vn2106 a122308 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not speci?ed in the original jedec drawing. the value listed is for reference only. ? this dimension is a non-jedec dimension. drawings not to scale. supertex doc.#: dspd-3to92n3, version d080408. seating plane 1 2 3 front v iew side v iew bottom v iew e1 e d e1 l e c 1 2 3 b a
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